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參數(shù)資料
| 型號(hào)： | KM684002E-25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| 中文描述： | 512Kx8位高速靜態(tài)RAM（5V的工作），革命銷(xiāo)出。在商業(yè)經(jīng)營(yíng)，擴(kuò)展和工業(yè)溫度范圍。 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | KM684002E-25 |
KM684002, KM684002E, KM684002I
CMOS SRAM
PRELIMINARY
Rev 3.0
June -1997
- 6 -
TIMING WAVE FORM OF READ CYCLE(2)
(WE=V
IH
)
CS
OE
Data Out
ADD
NOTES
(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
4. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device.
5. Transition is measured
±
200
§
from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
OH
or V
OL
Levels.
TIMING WAVE FORM OF WRITE CYCLE(1)
(OE=Clock)
OE
CS
Data In
WE
High-Z
ADD
Data Out
Data Valid
High-Z(8)
50%
50%
Vcc
Current
Data Valid
Icc
I
SB
t
RC
t
AA
t
CO
t
OLZ
t
OE
t
PU
t
LZ(4,5)
t
HZ(3,4,5)
t
OHZ
t
OH
t
PD
t
WC
t
AW
t
WP(2)
t
CW(3)
t
AS(4)
t
OHZ(6)
t
DW
t
DH
t
WR(5)
相關(guān)PDF資料 |
PDF描述 |
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| KM684002I-17 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002I-20 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002I-25 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM68512BLI-L | 64Kx8 bit Low Power CMOS Static RAM |
| KM68512BL-L | 64Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM684002I-17 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002I-20 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002I-25 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002J-17 | 制造商:Samsung Semiconductor 功能描述:512K X 8 STANDARD SRAM, 17 ns, PDSO36 |
| KM68512A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx8 bit Low Power CMOS Static RAM |
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