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參數資料
| 型號： | KM684002 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Quadruple Bilateral Analog Switch 14-VQFN -40 to 85 |
| 中文描述： | 512Kx8位高速靜態(tài)RAM（5V的工作），革命銷出。在商業(yè)經營，擴展和工業(yè)溫度范圍。 |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 149K |
| 代理商： | KM684002 |
KM684002, KM684002E, KM684002I
CMOS SRAM
PRELIMINARY
Rev 3.0
June -1997
- 2 -
512K x 8 Bit High-Speed CMOS Static RAM
FEATURES
ü
Fast Access Time 17,20,25
§à
(Max.)
ü
Low Power Dissipation
Standby (TTL) : 60
§ì
(Max.)
(CMOS) : 10
§ì
(Max.)
Operating KM684002 - 17 : 180
§ì
(Max.)
KM684002 - 20 : 170
§ì
(Max.)
KM684002 - 25 : 160
§ì
(Max.)
ü
Single 5.0V
±
10% Power Supply
ü
TTL Compatible Inputs and Outputs
ü
I/O Compatible with 3.3V Device
ü
Fully Static Operation
- No Clock or Refresh required
ü
Three State Outputs
ü
Center Power/Ground Pin Configuration
ü
Standard Pin Configuration
KM684002J : 36-SOJ-400
GENERAL DESCRIPTION
The KM684002 is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
KM684002 uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using Samsung's
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM684002 is packaged in
a 400 mil 36-pin plastic SOJ.
Clk Gen.
I/O
1
~ I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
512x8 Columns
A
0
A
1
A
2
A
3
A
4
A
7
A
8
A
9
A
13
A
14
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
18
WE
CS
OE
I/O
1
~ I/O
8
V
CC
V
SS
N.C
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
No Connection
PIN CONFIGURATION
(Top View)
SOJ
N.C
A
18
A
17
A
16
A
15
OE
I/O
8
I/O
7
Vss
Vcc
I/O
6
I/O
5
A
14
A
13
A
12
A
11
A
10
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
Vcc
Vss
I/O
3
I/O
4
WE
A
5
A
6
A
7
A
8
A
9
KM684002 -17/20/25
Commercial Temp.
KM684002E -17/20/25
Extended Temp.
KM684002I -17/20/25
Industrial Temp.
ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A
5
A
10
A
12
A
16
A
18
Column Select
I/O Circuit
A
6
A
11
A
15
A
17
相關PDF資料 |
PDF描述 |
|---|---|
| KM684002-17 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002-20 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002-25 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002E-17 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002E-20 | 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM684002-17 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002-20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002-25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002E-17 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
| KM684002E-20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
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