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參數(shù)資料
| 型號(hào)： | KM684000BLTI-5L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 512Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 190K |
| 代理商： | KM684000BLTI-5L |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
7
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
CS
2
t
CW(2)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
WC
t
AW
t
AS(3)
t
CW(2)
t
WP(1)
t
AW
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| KM684000BLTI-7L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000CL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000CLG-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
| KM684000CLG-5L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx8 bit Low Power CMOS Static RAM |
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