參數(shù)資料
型號(hào): KM681000BLGE-10L
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x8 bit Low Power CMOS Static RAM
中文描述: 128K的x8位低功耗CMOS靜態(tài)RAM
文件頁(yè)數(shù): 6/11頁(yè)
文件大?。?/td> 192K
代理商: KM681000BLGE-10L
PRELIMINARY
CMOS SRAM
Revision 0.3
April 1996
KM681000B Family
DATA RETENTION CHARACTERISTICS
* 1) Commercial Product : T
A
=0 to 70
é
, unless otherwise specified
2) Extended Product : T
A
=-25 to 85
é
, unless otherwise specified
2) Industrial Product : T
A
=-40 to 85
é
, unless otherwise specified
** T
A
=25
é
*** CS
1
V
CC
-0.2V,CS
2
V
CC
-0.2V(CS
1
controlled) or CS
2
0.2V(CS
2
controlled)
Item
Symbol
Test Condition*
Min
Typ**
Max
Unit
Vcc for data retention
V
DR
CS
1
***
Vcc-0.2V
2.0
-
5.5
V
Data retention current
I
DR
KM681000BL
KM681000BL-L
Vcc=3.0V
CS
1
Vcc-0.2V
L-Ver
LL-Ver
-
-
1
0.5
50
10
§
KM681000BLE
KM681000BLE-L
L-Ver
LL-Ver
-
-
-
-
50
25
KM681000BLI
KM681000BLI-L
L-Ver
LL-Ver
-
-
-
-
50
25
Data retention set-up time
Recovery time
t
RDR
t
RDR
See data retention waveform
0
5
-
-
-
-
ms
V
CC
0.4V
V
DR
CS
2
GND
Data Retention Mode
CS
2
0.2V
2) CS
2
controlled
4.5V
DATA RETENTION TIMING DIAGRAM
V
CC
4.5V
2.2V
V
DR
CS
1
GND
Data Retention Mode
CS
1
V
CC
- 0.2V
1) CS
1
Controlled
t
SDR
t
RDR
t
SDR
t
RDR
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