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參數(shù)資料
| 型號： | KM681000BLG-7 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x8 bit Low Power CMOS Static RAM |
| 中文描述： | 128K的x8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 192K |
| 代理商： | KM681000BLG-7 |
PRELIMINARY
CMOS SRAM
Revision 0.3
April 1996
KM681000B Family
DC AND OPERATING CHARACTERISTICS
* 1) Commercial Product : T
A
=0 to 70
é
, Vcc=5.0V
10%, unless otherwise specified
2) Extended Product : T
A
=-25 to 85
é
, Vcc=5.0V
10%, unless otherwise specified
2) Industrial Product : T
A
=-40 to 85
é
, Vcc=5.0V
10%, unless otherwise specified
** 20mA for Exteneded and Industrial Products
*** 15mA for Extended and Industrial Products
Item
Symbol
Test Conditions*
Mi
Typ**
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
§
§
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or WE=V
IL,
V
IO=
V
ss
to V
cc
-1
-
1
Operating power supply current
I
CC
CS
1
=V
IL
, CS
2
=V
IH
, V
IN
=V
IH
or V
IL
, I
IO
=0mA
-
7
15**
mA
Average operating current
I
CC1
Cycle time=1
§á
100% duty
CS
1
0.2V, CS
2
V
CC
-0.2V
-
-
10***
mA
I
CC2
I
IO
=0mA CS
1
=V
IL
,CS
2
IH
Min cycle, 100% duty
-
-
70
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.4
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH,
CS
2
=V
IL
-
-
3
mA
Standby
Current (CMOS)
KM681000BL
KM681000BL-L
I
SB1
CS
1
Vcc-0.2V
CS
2
Vcc-0.2V or
CS
2
0.2V
Other input=0~Vcc
L (Low Power)
LL (Low Low Power)
-
-
-
-
100
20
§
§
§
§
§
§
KM681000BLE
KM681000BLE-L
L (Low Power)
LL (Low Low Power)
-
-
-
-
100
50
KM681000BLI
KM681000BLI-L
L (Low Power)
LL (Low Low Power)
-
-
-
-
100
50
TEST CONDITIONS
(1.Test Load and Test Input/Output Reference)*
* See DC Operating conditions
Item
Value
Remark
Input pulse level
0.8 to 2.4V
-
Input rising & falling time
5ns
-
input and output reference voltage
1.5V
-
Output load (See right)
C
L
=100pF+1TTL
-
A.C CHARACTERISTICS
C
L
*
* Including scope and jig capacitance
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