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參數(shù)資料
| 型號(hào)： | KM64V1003B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態(tài) RAM) |
| 中文描述： | 256K × 4位（與OE）的高速CMOS靜態(tài)RAM（256K × 4位（帶OE）的高速的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | KM64V1003B |
KM64V1003B
CMOS SRAM
PPreliminary
Rev 2.0
- 5 -
February 1998
WRITE CYCLE
Parameter
Symbol
KM64V1003B-8
KM64V1003B-10
KM64V1003B-12
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
12
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
8
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
8
-
ns
Write Pulse Width(OE High)
t
WP
6
-
7
-
8
-
ns
Write Pulse Width(OE Low)
t
WP1
8
-
10
-
12
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
0
6
ns
Data to Write Time Overlap
t
DW
4
-
5
-
6
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data ou
t
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
RC
t
OE
t
CO
t
PU
t
PD
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
Valid Data
t
OHZ
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