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參數(shù)資料
| 型號： | KM62U256CLG-8L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗和低成本嚇的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | KM62U256CLG-8L |
ELECTRONICS
KM62V256C, KM62U256C Family
CMOS SRAM
Revision 04
April 1996
-
7
-
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (1)
(Address Controlled)
(/CS=/OE=Vil, /WE=Vih)
Address
Data Out
t
RC
Previous Data Valid
Data Valid
t
AA
t
OH
TIMING WAVEFORM OF READ CYCLE
(/WE= V
IH
)
Notes (READ CYCLE)
1. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels.
2. At any given temperature and voltage condition, t
HZ
(max.) is less than t
LZ
(min.) both for a given device and from
device to device.
t
RC
t
AA
t
CO
t
OE
t
OLZ(4)
t
OH
t
LZ
t
HZ
t
OHZ
Address
/CS
/OE
Data out
Data Valid
High - Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM62U256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62V256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62U256D | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM62V256D | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態(tài)RAM) |
| KM641001A | 256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 位(帶OE)高速CMOS 靜態(tài) RAM) |
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|---|---|
| KM62U256CLRG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLRG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power and Low Voltage CMOS Static RAM |
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