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參數(shù)資料
| 型號： | KM616FS4110 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256K × 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 16位超低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 167K |
| 代理商： | KM616FS4110 |
Revision 0.11
June 1998
CMOS SRAM
KM616FS4110 Family
Preliminary
- 4 -
DC AND OPERATING CHARACTERISTICS
1. Super low power product=5
μ
A with special handling.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH,
CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply
I
CC
I
IO
=0mA, CS
1
=V
IL,
CS
2
=V
IH
, V
IN
=V
IH
or V
IL
-
-
2
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100%duty, I
IO
=0mA, CS
1
≤
0.2V,
CS
2
≥
Vcc-0.2V, V
IN
≤
0.2V or V
IN
≥
VCC-0.2V
-
-
4
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH,
VIN=V
IL
or V
IH
-
-
35
mA
Output low voltage
V
OL
I
OL
= 0.5mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -0.5mA
2.0
-
-
V
Standby Current(TTL)
I
SB
CS
1
=V
IH
, CS
2
=V
IL
, Other inputs=V
IH
or V
IL
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V(CS
1
controlled) or
CS
2
≤
0.2V(CS
2
controlled), Other inputs=0~Vcc
-
0.5
10
1)
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. Industrial Product: T
A
=-40 to 85
°
C, otherwise specified
2.Overshoot: Vcc + 1.0 V in case of pulse width
≤
20ns
3.Undershoot: -1.0 V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.4
2.5
2.6
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.0
-
Vcc+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
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