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參數(shù)資料
| 型號： | KM616FR4110 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256K × 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 16位超低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 167K |
| 代理商： | KM616FR4110 |
Revision 0.11
June 1998
CMOS SRAM
KM616FR4110 Family
Advance
- 1 -
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Document Title
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.11
Remark
Advance
Advance
History
Initial Draft
Revise
- Speed bin change : 70/100ns
→
85/100ns
- DC characteristics change
I
OL
: 0.5mA
→
0.1mA
I
OH
: -0.5mA
→
-0.1mA
I
SB1
: Super low power product=1
μ
A
→
2
μ
A
I
DR
: 3/1
μ
A(LL/SL, Vcc=1.5V)
→
3/2
μ
A(LL/SL, Vcc=1.2V)
- 48-CSP package dimension change
Die thickness : 0.32mm
→
0.45mm
E : 0.80mm
→
0.93mm
E1 : 0.55mm
→
0.68mm
Errata correction
Draft Date
April 8, 1998
June 27, 1998
August 17, 1998
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