參數(shù)資料
型號： KM4170
廠商： Fairchild Semiconductor Corporation
英文描述： Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
中文描述： 低成本，2.7
文件頁數(shù)： 3/16頁
文件大小： 459K
代理商： KM4170
KM4170, KM4270, KM4470
DATA SHEET
REV. 5 December 2002
3
Absolute Maximum Ratings
Parameter
Supply Voltages
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature, 10 seconds
Operating Temperature Range, recommended
Input Voltage Range
IoutContinuous
Min.
0
–
-65
–
-40
-Vs-0.5
-30
Max.
+6
+175
+150
+260
+85
+Vs+0.5
+30
Unit
V
°C
°C
°C
°C
V
mA
Electrical Specifications
(V
s
= +2.7V, G = 2, R
L
= 10k
to V
s
/2, R
f
= 5k
; unless otherwise noted)
Parameter
AC Performance
-3dB Bandwidth
1
Conditions
Min.
Typ.
Max.
Unit
G = +1, V
o
= 0.02V
pp
G = +2, V
o
= 0.2V
pp
G = +2, V
o
= 2V
pp
4.9
3.7
1.4
2.2
163
<1
5.3
-72
-72
0.03
21
MHz
MHz
MHz
MHz
ns
%
V/
μ
s
dBc
dBc
%
nV/
√
Hz
Full Power Bandwidth
Gain Bandwidth Product
Rise and Fall Time
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
THD
Input Voltage Noise
DC Performance
Input Offset Voltage
2
Average Drift
Input Bias Current
2
Average Drift
Power Supply Rejection Ratio
2
Open Loop Gain
Quiescent Current Per Channel
2
Input Characteristics
Input Resistance
Input Capacitance
Input Common Mode Voltage Range
Common Mode Rejection Ratio
2
Output Characteristics
Output Voltage Swing
2
1V step
1V step
1V step
1V
pp
, 10kHz
1V
pp
, 10kHz
1V
pp
, 10kHz
>10kHz
-6
0.5
5
90
32
83
90
136
+6
mV
μ
V/°C
nA
pA/°C
dB
dB
μ
A
420
DC
R
L
= 10k
55
190
12
2
M
pF
V
dB
-0.25 to 2.95
81
DC, V
cm
= 0V to V
s
55
R
L
= 10k
to V
s
/2
R
L
= 1k
to V
s
/2
R
L
= 200
to V
s
/2
0.06 to 2.64 0.02 to 2.68
V
V
V
0.05 to 2.63
0.11 to 2.52
±16
2.7
Output Current
Power Supply Operating Range
mA
V
2.5
5.5
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. For G = +1, Rf= 0.
2. For RL= 10k
, KM4170, KM4270, and KM4470 are 100% tested at 25°C.
相關(guān)PDF資料
PDF描述
KM4170IS5TR3 Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM4470IP14TR3 Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM4170IT5TR3 Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM44C1003D 1M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode(1M x 4位CMOS四 CAS 動態(tài)RAM(帶快速頁模式))
KM44C1004D 1M x 4Bit CMOS Dynamic RAM with Extended Data Out(1M x 4位CMOS 動態(tài)RAM(帶擴展數(shù)據(jù)輸出))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM4170IS5TR3 功能描述:高速運算放大器 Tiny RRIO Amplifier RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
KM4170IT5TR3 功能描述:運算放大器 - 運放 Tiny RRIO Amplifier RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel
KM418RD16AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD16AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD16C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*