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參數(shù)資料
| 型號： | KM416S8030 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬× 16 × 4銀行同步DRAM |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 116K |
| 代理商： | KM416S8030 |
KM416S8030
CMOS SDRAM
REV. 2 Mar. '98
Preliminary
The KM416S8030 is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 16
bits, fabricated with SAMSUNG
′
s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clcok cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS Latency (2 & 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock.
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
2M x 16Bit x 4 Banks Synchronous DRAM
ORDERING INFORMATION
Part NO.
MAX Freq.
125MHz
100MHz
100MHz
100MHz
Interface Package
KM416S8030T-G/F8
KM416S8030T-G/FH
KM416S8030T-G/FL
KM416S8030T-G/F10
LVTTL
54pin
TSOP(II)
Samsung Electronics reserves the right to
change products or specification without
notice.
*
Bank Select
Data Input Register
2M x 16
2M x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
LDQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
2M x 16
2M x 16
Timing Register
UDQM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V1004A | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-6 | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-7 | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-8 | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-F6 | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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