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參數(shù)資料
| 型號： | KM29U128T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 2/26頁 |
| 文件大小： | 481K |
| 代理商： | KM29U128T |
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KM29U128T, KM29U128IT
FLASH MEMORY
2
16M x 8 Bit NAND Flash Memory
The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Mem-
ory with a spare 512K(524,288)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typically 200
μ
s and an erase operation can be performed in typ-
ically 2ms on a 16K-byte block. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and inter-
nal verify and margining of data. Even the write-intensive sys-
tems can take advantage of the KM29U128
′
s extended
reliability of 1,000,000 program/erase cycles by providing either
ECC(Error Correcting Code) or real time mapping-out algo-
rithm. These algorithms have been implemented in many mass
storage applications and also the spare 16 bytes of a page
combined with the other 512 bytes can be utilized by system-
level ECC.
The KM29U128 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
GENERAL DESCRIPTION
FEATURES
Voltage supply : 2.7V~3.6V
Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200
μ
s(typ.)
- Block Erase time : 2ms(typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
Package : 48 - pin TSOP Type1 - 12 x 20 / 0.5 mm pitch
PIN CONFIGURATION
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
48-pin TSOP1
Standard Type
12mm x 20mm
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
CE
Vcc
ALE
WE
N.C
N.C
Pin Name
Pin Function
I/O
0
~ I/O
7
Data Input/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
SE
Spare area Enable
R/B
Ready/Busy output
V
CC
Power(+2.7V~3.6V)
V
SS
Ground
N.C
No Connection
PIN DESCRIPTION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29U64000IT | 8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
| KM29U64000K1 | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U64000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
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