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參數資料
| 型號： | KM29N32000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數： | 10/26頁 |
| 文件大小： | 316K |
| 代理商： | KM29N32000T |
KM29N32000T, KM29N32000IT
FLASH MEMORY
10
Error in program or erase operation
The device may fail during a program or erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
KM29N32000 Technical Notes
(Continued)
Failure Mode
Detection and Countermeasure sequence
Block
Erase Failure
Status Read after Erase --> Block Replacement
Page
Program Failure
Status Read after Program --> Block Replacement
Single Bit
Program Failure
("1" --> "0")
Block Verify after Program --> Retry or ECC
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Block Replacement
When the error happens in Block "A", try to reprogram the
data into another Block "B" by reloading from an external
buffer. Then, prevent further system access to Block
"A"(by creating a "bad block" table or other appropriate
scheme.)
During Program operation ;
During Erase operation ;
When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
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