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參數(shù)資料
| 型號： | KM29N32000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 25/26頁 |
| 文件大小： | 316K |
| 代理商： | KM29N32000IT |
KM29N32000T, KM29N32000IT
FLASH MEMORY
25
READY/BUSY
The device has a R/
B
output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is begin after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/ B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by following equation.
Rp =
V
CC
R/B
open drain output
Device
GND
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
∑
I
L
=
Note*
8mA +
∑
I
L
where I
L
is the sum of the input currents of all devices tied to the
R/B pin.
Note* KM29V32000 : 3.2V
KM29N32000 : 5.1V
KM29W32000 : 5.1V When Vcc=3.6~5.5V
3.2V When Vcc=2.7~3.6V
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相關代理商/技術參數(shù) |
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| KM29U128IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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| KM29U64000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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