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參數(shù)資料
| 型號： | KM23V8000DG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8) CMOS Mask ROM(8M位 (1Mx8) CMOS掩膜ROM) |
| 中文描述： | 800萬位（1Mx8）的CMOS掩模ROM（800萬位（1Mx8）的CMOS掩膜光盤） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | KM23V8000DG |
KM23V8000D(G)
CMOS MASK ROM
PRELIMINARY
TEST CONDITIONS
Item
Value
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
0.45V to 2.4V
10ns
1.5V
1 TTL Gate and C
L
=100pF
AC CHARACTERISTICS
(T
A
= 0
é
to +70
é
, V
CC
= 3.3V/3.0V
0.3V, unless otherwise noted.)
READ CYCLE
Item
Symbol
V
CC
=3.3V
0.3V
V
CC
=3.0V
0.3V
Unit
Min
Max
Min
Max
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
tRC
tACE
tAA
tOE
100
120
ns
ns
ns
ns
100
100
50
120
120
60
tDF
20
20
ns
Output Hold from Address Change
tOH
0
0
ns
TIMING DIAGRAM
READ
ADD
CE
OE
D
OUT
NOTE :
tDF is defined as the time at which the outputs achieve the open circuit condition and is not
referenced to V
OH
or V
OL
level.
t
ACE
t
OE
ADD1
ADD2
t
RC
VALID DATA
VALID DATA
t
OH
t
DF(Note)
t
AA
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KM23V8105D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
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