參數(shù)資料
型號: KM23V8000D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M-Bit (1Mx8) CMOS Mask ROM(8M位 (1Mx8) CMOS掩膜ROM)
中文描述: 800萬位(1Mx8)的CMOS掩模ROM(800萬位(1Mx8)的CMOS掩膜光盤)
文件頁數(shù): 3/3頁
文件大?。?/td> 34K
代理商: KM23V8000D
KM23V8000D(G)
CMOS MASK ROM
PRELIMINARY
TEST CONDITIONS
Item
Value
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
0.45V to 2.4V
10ns
1.5V
1 TTL Gate and C
L
=100pF
AC CHARACTERISTICS
(T
A
= 0
é
to +70
é
, V
CC
= 3.3V/3.0V
0.3V, unless otherwise noted.)
READ CYCLE
Item
Symbol
V
CC
=3.3V
0.3V
V
CC
=3.0V
0.3V
Unit
Min
Max
Min
Max
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
tRC
tACE
tAA
tOE
100
120
ns
ns
ns
ns
100
100
50
120
120
60
tDF
20
20
ns
Output Hold from Address Change
tOH
0
0
ns
TIMING DIAGRAM
READ
ADD
CE
OE
D
OUT
NOTE :
tDF is defined as the time at which the outputs achieve the open circuit condition and is not
referenced to V
OH
or V
OL
level.
t
ACE
t
OE
ADD1
ADD2
t
RC
VALID DATA
VALID DATA
t
OH
t
DF(Note)
t
AA
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