參數(shù)資料
型號： KGF1658
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： Power FET (Ceramic Package Type)(陶瓷封裝型的功率場效應(yīng)晶體管)
中文描述： 功率場效應(yīng)晶體管（陶瓷封裝型）（陶瓷封裝型的功率場效應(yīng)晶體管）
文件頁數(shù)： 3/7頁
文件大小： 70K
代理商： KGF1658
3/7
KGF1658
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: f
= 850 MHz, V
DS
= 3.4 V, I
DSQ
= 400 mA ,
*2 IS-54 condition,
±
30kHz
*3 IS-54 condition,
±
60kHz
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
7
0.4
5.5
Unit
V
V
A
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
5
150
125
W
°C
°C
Min.
—
–5
—
—
—
–45
Ta = Tc = 25°C
Item
Symbol
I
GSS
Condition
Max.
100
Unit
m
A
—
—
Min.
—
—
—
Typ.
—
50
13
Drain efficiency
Linear gain
h
D
G
LIN
(*1),P
O
= 31 dBm
(*1),P
IN
= 12 dBm
%
dB
(Ta = 25°C)
Thermal resistance
R
th
°C/W
—
—
18
Channel to case
V
GS(off)
ACP
30
ACP
60
Gate-source cut-off voltage
Adjacent channel
leackage power
–2.0
—
—
V
–3.0
—
V
DS
= 3 V, I
DS
= 11.2 mA
(*1),(*2) P
0
= 31 dBm
(*1),(*3) P
0
= 31 dBm
—
–28
I
DSS
Drain current
—
A
4.0
V
DS
= 1.5 V, V
GS
= 0 V
—
I
DS(off)
Drain-source leakage current
1.5
mA
—
V
DS
= 7 V, V
GS
= –5 V
—
I
GDO
Gate-drain leakage current
1
mA
—
V
GD
= –12 V
—
Gate-source leakage current
V
GS
= –5 V
dBc
dBc
—
–48
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