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參數(shù)資料
| 型號(hào)： | KGF1531 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Small-Signal Amplifier |
| 中文描述： | 小信號(hào)放大器 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 114K |
| 代理商： | KGF1531 |
3/8
KGF1531
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 3 V
±
0.3 V, V
G(1,2)
= 0 V, f
RF
= 1.9 GHz, f
LO
= 1.65 GHz, P
LO
= 0 dBm
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
4.0
0.4
50
Unit
V
V
mA
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
200
150
125
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Ta = 25°C
Item
P
O1
Symbol
I
GSS
Condition
Max.
30
Unit
m
A
Output power
—
dBm
—
—
Min.
—
0
—
10
(*1)
Typ.
—
1.0
15
5.0
12
Noise figure
Conversion gain
F
(*1)
(*1), P
RF
= –20 dBm
dB
dB
G
C
(Ta = 25°C)
Third-order intercept point
IP
3
dBm
—
—
12.5
(*2), f
2
= 1.901 GHz
V
GS(off)
gm
Gate-source cut-off voltage
Transconductance
–0.6
—
V
–1.4
23
V
DS
= 3 V, I
DS
= 100
m
A
V
DS
= 3 V, I
DS
= 6 mA
—
30
I
DSS
I
D
Drain current
Operating current
—
8.0
mA
mA
15
—
V
DS
= 3 V, V
GS
= 0 V
(*1), P
IN
= –20 dBm
25
6.0
I
DS(off)
Drain-source leakage current
30
m
A
—
V
DS
= 3 V, V
GS(1,2)
= –2 V
—
I
GDO
Gate-drain leakage current
30
m
A
—
V
GD(1,2)
= –6 V
—
Gate-source leakage current
V
GS
= –3 V
mS
28
ISO
Port to port Isolation
—
dB
—
(*1), P
RF
= –20 dBm
22
R-I
L-I
L-R
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