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參數(shù)資料
| 型號(hào)： | KGF1323F |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Power FET (Plastic Package Type) |
| 中文描述： | 功率場(chǎng)效應(yīng)管（塑料包裝型） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 73K |
| 代理商： | KGF1323F |
3/6
KGF1323F
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Condition: V
DS
= 5.8 V, I
DSQ
= 175 mA, P
IN
= 20 dBm, f
= 850 MHz
*2 Condition: V
DS
= 5.8 V, I
DSQ
= 175 mA, P
O
= 29 dBm, f
= 850 MHz
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
10
0.4
3.0
Unit
V
V
A
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
5.0
150
125
W
°C
°C
Min.
—
–6.0
—
—
—
–45
Ta = Tc = 25°C
Item
P
O
h
D
h
D2
R
th
Symbol
I
GSS
Condition
Max.
10
Unit
m
A
Output power
Drain efficiency
Drain efficiency 2
Thermal resistance
—
—
—
—
dBm
%
%
°C/W
Min.
—
31.5
70
47
—
(*1)
(*1)
(*2)
Channel to case
Typ.
—
—
—
—
14
(Ta = 25°C)
V
GSQ
Gate bias Q point
–2.45
V
–3.35
V
DS
= 5.8 V, I
DSQ
= 175 mA
—
I
DSS
Drain current
—
A
2.0
V
DS
= 1.5 V, V
GS
= 0 V
—
I
DS(off)
Drain-source cut-off current
1.5
mA
—
V
DS
= 10 V, V
GS
= –6 V
—
V
GDO
Gate-drain Breakdown Voltage
—
V
22
V
GD
= –1.5 mA
—
Gate-source leakage current
V
GS
= –6 V
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