參數(shù)資料
型號(hào): KGF1254B
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: Medium-Power Amplifier
中文描述: 中等功率放大器
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 171K
代理商: KGF1254B
3/14
KGF1254B/1254
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 5.2 V, V
G
= 0 V
*2 Self-bias condition: V
DD
= 3 V, V
G
= 0 V
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
10
0.4
360
Unit
V
V
mA
Drain-Source voltage
Gate-Source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
300
150
125
mW
°C
°C
Min.
–5.0
–45
Ta = 25°C
Item
I
GSS
I
GDO
I
DS(off)
I
DSS
Symbol
Condition
Max.
72
360
720
Unit
m
A
m
A
m
A
mA
Gate-Source leakage current
Gate-Drain leakage current
Drain-Source leakage current
Drain current
dB
Min.
130
14.0
20.0
(*1), P
IN
=
–10 dBm
V
GS
= –3 V
V
GD
= –15 V
V
DS
= 3 V, V
GS
= –2.5 V
V
DS
= 3 V, V
GS
= 0 V
(*1), P
IN
= 10 dBm,
f = 850 MHz
Typ.
17.0
13.5
11.0
17.0
13.0
10.0
22.0
20.0
18.0
20.0
16.0
15.0
Linear gain
G
LIN
(*2), P
IN
=
–10 dBm
Output power
P
O
(*1), P
IN
=
10 dBm
dBm
(*2), P
IN
=
10 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
(Ta = 25°C)
I
D
Operating current
80.0
mA
V
GS(off)
gm
F
Gate-Source cut-off voltage
Transconductance
Noise figure
–1.0
2.5
V
–2.0
125
V
DS
= 3 V, I
DS
= 720
m
A
V
DS
= 3 V, I
DS
= 60 mA
(*1), f = 850 MHz
mS
dB
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