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參數(shù)資料
| 型號(hào)： | KGF1175B |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Small-Signal Amplifier |
| 中文描述： | 小信號(hào)放大器 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | KGF1175B |
3/8
KGF1175B/1175
electronic components
Item
P
O
IP
3
Symbol
I
GSS
Condition
Max.
12
Unit
m
A
Output power
Third-order intercept point
—
—
dBm
dBm
2.0
—
Min.
—
3.0
—
—
12.0
(*1), P
IN
= –3 dBm
(*1), f
2
= 851 MHz
Typ.
—
—
11
—
—
Noise figure
Linear gain
F
(*1)
(*1), P
IN
= –20 dBm
dB
dB
G
LIN
(Ta = 25°C)
V
GS(off)
gm
Gate-source cut-off voltage
Transconductance
–1.0
—
V
–2.0
8
V
DS
= 3 V, I
DS
= 120
m
A
V
DS
= 3 V, I
DS
= 1.5 mA
—
—
I
DS(off)
I
DSS
Drain-source leakage current
Drain current
120
—
m
A
mA
—
15
V
DS
= 3 V, V
GS
= –2.5 V
V
DS
= 3 V, V
GS
= 0 V
—
—
I
GDO
Gate-drain leakage current
60
m
A
—
V
GD
= –8 V
—
Gate-source leakage current
V
GS
= –3 V
I
D
Operating current
2.5
mA
—
(*1), P
IN
= –20 dBm
—
mS
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
7.0
0.4
60
Unit
V
V
mA
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
200
150
125
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Ta = 25°C
*1 Self-bias condition: V
DD
= 5.0 V
±
0.25 V, V
G
= 0 V, f
= 850 MHz
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