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參數(shù)資料
| 型號(hào)： | KGF1156 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | Small-Signal UHF-Band Amplifier(小信號(hào)超高頻波段放大器) |
| 中文描述： | 小信號(hào)超高頻波段放大器（小信號(hào)超高頻波段放大器） |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 75K |
| 代理商： | KGF1156 |
3/7
KGF1156
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 5.0 V
±
0.25 V, V
G1
= 0 V, V
G2
= 1.0 V, f
= 850 MHz
*2 Self-bias condition: V
DD
= 5.0 V
±
0.25 V, V
G1
= 0 V, V
G2
= 1.5 V, f
= 850 MHz
Item
V
DS
V
GS
I
DS
Symbol
Condition
Ta = 25°C
Max.
7.0
0.4
60
Unit
V
V
mA
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
P
tot
T
ch
T
stg
Ta = 25°C
Ta = 25°C
—
—
200
150
125
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Ta = 25°C
Item
P
O
Symbol
I
GSS
Condition
Max.
12
Unit
m
A
Output power
—
dBm
3.0
—
Min.
—
6.0
—
15.0
(*2), P
IN
= –3 dBm
Typ.
—
—
—
—
Noise figure
Linear gain
F
(*1)
(*1), P
IN
= –20 dBm
dB
dB
G
LIN
(Ta = 25°C)
V
GS(off)
Gate-source cut-off voltage
–1.0
V
–2.0
V
DS
= 3 V, I
DS
= 120
m
A
—
I
DS(off)
I
D
Drain-source leakage current
Operating current
120
6.0
m
A
mA
—
—
V
DS
= 3 V, V
GS(1,2)
= –2.5 V
(*1), P
IN
= –20 dBm
—
—
I
GDO
Gate-drain leakage current
60
m
A
—
V
GD(1,2)
= –8 V
—
Gate-source leakage current
V
GS(1,2)
= –3 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KGF1165 | 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:UHF-band Device Series |
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