參數(shù)資料
型號： KFW4G16U2M-DID5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 105/125頁
文件大小： 1657K
代理商： KFW4G16U2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
105
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Parameter
Symbol
Min
Typ
Max
Unit
WE Cycle Time
t
WC
70
-
-
ns
AVD low pulse width
t
AVDP
12
-
-
ns
Address Setup Time
t
AWES
0
-
-
ns
Address Hold Time
t
AH
30
-
-
ns
Data Setup Time
t
DS
25
-
-
ns
Data Hold Time
t
DH
0
-
-
ns
CE Setup Time
t
CS
0
-
-
ns
CE Hold Time
t
CH
10
-
-
ns
WE Pulse Width
t
WPL
40
-
-
ns
WE Pulse Width High
t
WPH
30
-
-
ns
AVD Disable to WE Disable
t
VLWH
15
-
-
ns
WE Disable to AVD Enable
t
WEA
15
-
-
ns
5.8 AC Characteristics for Load/Program/Erase
Performance
See Timing Diagrams 6.8, 6.9, and 6.10
Note 1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor
value.
Parameter
Symbol
Min
Typ
Max
Unit
Sector Load time(Note 1)
t
RD1
-
23
35
μ
s
Page Load time(Note 1)
t
RD2
-
30
45
μ
s
Sector Program time(Note 1)
t
PGM1
-
205
720
μ
s
Page Program time(Note 1)
t
PGM2
-
220
750
μ
s
OTP Access Time(Note 1)
t
OTP
-
500
700
ns
Lock/Unlock/Lock-tight Time(Note 1)
t
LOCK
-
500
700
ns
Erase Suspend Time(Note 1)
t
ESP
-
400
500
μ
s
Erase Resume Time(Note 1)
1 Block
t
ERS1
-
2
3
ms
2~64 Blocks
t
ERS2
4
6
ms
Number of Partial Program Cycles in the sector (Including main and
spare area)
NOP
-
-
2
cycles
Block Erase time (Note 1)
1 Block
t
BERS1
-
2
3
ms
2~64 Blocks
t
BERS2
-
4
6
ms
Multi BlocK Erase Verify Read time(Note 1)
t
RD3
-
70
100
μ
s
5.7 AC Characteristics for Asynchronous Write/Load/
Program/Erase Operation
See Timing Diagrams 6.7, 6.8 and 6.9
相關PDF資料
PDF描述
KFW4G16U2M-DID6 FLASH MEMORY(54MHz)
KFW1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G; Conductor Material:Copper RoHS Compliant: Yes
KFG2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G RoHS Compliant: Yes
KFH2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
KFW2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
KFW4G16U2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFWP-A-100B-30 功能描述:火線接頭 6P PLUG SHORT BODY BLACK 30u RoHS:否 制造商:Molex 產(chǎn)品:IEEE 1394 Firewire Connectors 標準:IEEE 1394 位置/觸點數(shù)量:6 節(jié)距:2 mm 觸點電鍍:Unplated 觸點材料:Phosphor Bronze 型式:Female 電流額定值:0.5 A 安裝風格:Through Hole 端接類型:Solder Tab 連接器類型:Firewire Receptacle
KFWP-A-100W-30 功能描述:火線接頭 6P PLUG WHITE RoHS:否 制造商:Molex 產(chǎn)品:IEEE 1394 Firewire Connectors 標準:IEEE 1394 位置/觸點數(shù)量:6 節(jié)距:2 mm 觸點電鍍:Unplated 觸點材料:Phosphor Bronze 型式:Female 電流額定值:0.5 A 安裝風格:Through Hole 端接類型:Solder Tab 連接器類型:Firewire Receptacle
KFWPX-A-100B30 功能描述:火線接頭 6P PLUG SHORT BODY BLACK 30u RoHS:否 制造商:Molex 產(chǎn)品:IEEE 1394 Firewire Connectors 標準:IEEE 1394 位置/觸點數(shù)量:6 節(jié)距:2 mm 觸點電鍍:Unplated 觸點材料:Phosphor Bronze 型式:Female 電流額定值:0.5 A 安裝風格:Through Hole 端接類型:Solder Tab 連接器類型:Firewire Receptacle
KFWPX-A-100W30 功能描述:火線接頭 6P PLUG WHITE RoHS:否 制造商:Molex 產(chǎn)品:IEEE 1394 Firewire Connectors 標準:IEEE 1394 位置/觸點數(shù)量:6 節(jié)距:2 mm 觸點電鍍:Unplated 觸點材料:Phosphor Bronze 型式:Female 電流額定值:0.5 A 安裝風格:Through Hole 端接類型:Solder Tab 連接器類型:Firewire Receptacle
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