參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 100/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
100
Note 1. CE should be VIH for RDY. IOBE should be ’0’ for INT.
Note 2. Icc active for Host access
Note 3. ICC active for Internal operation. (without host access)
Note 4. Vccq is equivalent to Vcc-IO
Parameter
Symbol
Test Conditions
KFM1G16Q2M
Unit
Min
Typ
Max
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
Single
- 1.0
-
+ 1.0
μ
A
DDP
- 2.0
-
+ 2.0
Output Leakage Current
I
LO
V
OUT
=V
SS
to V
CC
, V
CC
=V
CCmax
,
CE or OE=V
IH
(Note 1)
Single
- 1.0
-
+ 1.0
μ
A
DDP
- 2.0
+ 2.0
Active Asynchronous Read Current
(Note 2)
I
CC1
CE=V
IL
, OE=V
IH
-
8
15
mA
Active Burst Read Current (Note 2)
I
CC2
CE=V
IL
, OE=V
IH
54MHz
-
12
20
mA
1MHz
-
3
4
mA
54MHz
(DDP)
-
17
22
mA
1MHz
(DDP)
-
3
4
mA
Active Write Current (Note 2)
I
CC3
CE=V
IL
, OE=V
IH
Single
-
8
15
mA
DDP
-
13
20
mA
Active Load Current (Note 3)
I
CC4
CE=V
IL
, OE=V
IH
, WE=V
IH
-
30
40
mA
Active Program Current (Note 3)
I
CC5
CE=V
IL
, OE=V
IH
, WE=V
IH
-
25
30
mA
Active Erase Current (Note 3)
I
CC6
CE=V
IL
, OE=V
IH
, WE=V
IH
-
20
25
mA
Multi Block Erase Current (Note 3)
I
CC7
CE=V
IL
, OE=V
IH
, WE=V
IH
, 64blocks
-
20
25
mA
Standby Current
I
SB
CE= RP=V
CC
±
0.2V
Single
-
10
50
μ
A
DDP
-
20
100
Input Low Voltage
V
IL
-
-0.5
-
0.4
V
Input High Voltage (Note 4)
V
IH
-
V
CCq
-0.4
-
V
CCq
+0.4
V
Output Low Voltage
V
OL
I
OL
= 100
μ
A ,V
CC
=V
CCmin
, V
CCq
=V
CCqmin
-
-
0.2
V
Output High Voltage
V
OH
I
OH
= -100
μ
A , V
CC
=V
CCmin
, V
CCq
=V
CCqmin
V
CCq
-0.1
-
-
V
4.3 DC Characteristics
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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