參數(shù)資料
型號： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 4/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
4
Revision History
Revision No.
0.4
1.0
Remark
Preliminary
Final
Draft Date
Feb. 28, 2005
May. 17, 2005
History
1. Corrected the errata
2. Updated DC parameters to RMS Values
3. Revised Warm Reset Timing Diagram
4. Added INT Capacitance Information
5. Added Speed Information Ordering Information
6. Added Booting Sequence in Technical Note
7. Revised OTP Program and Lock Flow Chart
8. Revised tOEZ description on Chapter 5.5
9. Revised tASO value to 10ns
10. Added RDY and INT Pin behavior before IOBE=1
11. Added Erase suspend and Resume Information for Multi Block Erase
12. Added I
LI
and I
LO
values for DDP on Chater 4.3
1. Corrected the errata
2. Added Data Protection flow chart.
3. Removed Cache Read Operation.
4. Added additional information on command register.
5. Revised Interrupt status register information.
6. Added INT pin schematic.
7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
8. Revised AC/DC parameters
9. Revised ECC Bypass Description
10. Revised Reset Parameters and Timing Diagrams.
相關PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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