參數(shù)資料
型號： KFG5616Q1M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 5/93頁
文件大?。?/td> 1223K
代理商： KFG5616Q1M-DEB
OneNAND256
FLASH MEMORY
5
1. FEATURES
Architecture
Design Technology: 0.12
μ
m
Voltage Supply
- 1.8V device(KFG5616Q1M) : 1.7V~1.95V
- 2.65V device(KFG5616D1M) : 2.4V~2.9V
- 3.3V device(KFG5616U1M) : 2.7V~3.6V
Organization
- Host Interface:16bit
Internal BufferRAM(3K Bytes)
- 1KB for BootRAM, 2KB for DataRAM
NAND Array
- Page Size : (1K+32)bytes
- Block Size : (64K+2K)bytes
Host Interface type
- Synchronous Burst Read
: Clock Frequency: up to 54MHz
: Linear Burst - 4 , 8 , 16 , 32 words with wrap-around
: Continuous Sequential Burst(512 words)
- Asynchronous Random Read
: Access time of 76ns
- Asynchronous Random Write
Programmable Read latency
Multiple Sector Read
- Read multiple sectors by Sector Count Register(up to 2 sectors)
Multiple Reset
- Cold Reset / Warm Reset / Hot Reset / NAND Flash Reset
Power dissipation (typical values, C
L
=30pF)
- Standby current : 10uA@1.8V device, 15uA@2.65V/3.3V device
- Synchronous Burst Read current(54MHz) : 12mA@1.8V device, 20mA@2.65V/3.3V device
- Load current : 20mA@1.8V device, 20mA@2.65V/3.3V device
- Program current: 20mA@1.8V device, 20mA@2.65V/3.3V device
- Erase current: 15mA@1.8V device, 18mA@2.65V/3.3V device
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Performance
Voltage detector generating internal reset signal from Vcc
Hardware reset input (RP)
Data Protection
- Write Protection mode for BootRAM
- Write Protection mode for NAND Flash Array
- Write protection during power-up
- Write protection during power-down
User-controlled One Time Programmable(OTP) area
Internal 2bit EDC / 1bit ECC
Internal Bootloader supports Booting Solution in system
Hardware Features
Handshaking Feature
- INT pin: Indicates Ready / Busy of OneNAND
- Polling method: Provides a software method of detecting the Ready / Busy status of OneNAND
Detailed chip information by ID register
Software Features
Package
- 63ball, 9.5mm x 12mm x max 1.0mmt , 0.8mm ball pitch FBGA
- 48 TSOP 1, 12mm x 20mm, 0.5mm pitch
Packaging
相關(guān)PDF資料
PDF描述
KFG5616U1M-DIB OneNAND256
KFM110 SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THR IF CIRCUITS OF CORDLESS PHONE)
KFM1216Q2M FLASH MEMORY
KFM1216Q2M-DEB FLASH MEMORY
KFM1216Q2M-DED FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG5616U1A-DIB 制造商:Samsung Semiconductor 功能描述:
KFG5616U1A-DIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY
KFG5616U1A-DIB5000 制造商:Samsung Semiconductor 功能描述:256MNOFLASHADE-MUXED SLC W/X16(7X9) - Bulk
KFG5616U1A-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY
KFG5616U1A-PIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*