參數(shù)資料
型號(hào): KFG1216Q2A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 15/114頁
文件大小: 1382K
代理商: KFG1216Q2A
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
15
The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering.
The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up.
There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute
simultaneous Read-While load, and Write-While-program operations after Boot Up. During Boot Up, the BootRam is used by the host
to initialize the main memory, and deliver boot code from NAND Flash core to host.
The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector.
The main area data is 512B. The spare area data is 16B.
External Memory Array Information
Area
BootRAM
DataRAM0
DataRAM1
Total Size
1KB+32B
2KB+64B
2KB+64B
Number of Sectors
2
4
4
Sector
Main
512B
512B
512B
Spare
16B
16B
16B
Host
OTP Block
Nand Array
Boot code (1KB)
BootRAM (1KB)
DataRAM0 (2KB)
DataRAM1 (2KB)
External (BufferRAM)
Memory
Internal (Nand Array)
Memory
2.6.2 External (BufferRAM) Memory Organization
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