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參數(shù)資料
| 型號(hào)： | KDR728E |
| 廠商： | KEC Holdings |
| 英文描述： | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) |
| 中文描述： | 肖特基型二極管（低壓高速開關(guān)） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 386K |
| 代理商： | KDR728E |
2003. 7. 8
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR728E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.42(Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25
)
ESC
DIM
A
MILLIMETERS
1.60 0.10
+
+
+
+
+
+
B
C
D
E
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
* : Mounted on a glass epoxy circuit board of 20
pad dimension of 4
20mm,
4mm.
ELECTRICAL CHARACTERISTICS (Ta=25
)
Type Name
Marking
T
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
150
mA
Average Forward Current
I
O
30
mA
Surge Current (10ms)
I
FSM
200
mA
Power Dissipation
P
D
150
*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55
125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.3
0.4
V
V
F(2)
I
F
=30mA
-
0.42
0.55
Reverse Current
I
R
V
R
=30V
-
-
300
A
Total Capacitance
C
T
V
R
=1V, f=1MHz
-
6.5
-
pF
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