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參數(shù)資料
| 型號(hào)： | KDR105S |
| 廠商： | KEC Holdings |
| 英文描述： | SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION) |
| 中文描述： | 肖特基型二極管（高頻更正） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 380K |
| 代理商： | KDR105S |
2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR105S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
High frequency rectification
(Switching regulators, converters, choppers)
FEATURES
Low Forward Voltage : V
F
max=0.55V.
Low Leakage Current : I
R
max=10 A.
MAXIMUM RATING (Ta=25
)
DIM
A
MILLIMETERS
2.93+
1. NC
2. ANODE
3. CATHODE
SOT-23
B
C
D
E
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25
)
Type Name
Marking
Lot No.
DL
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=50 A
50
-
-
V
Forward Voltage
V
F
I
F
=0.1A
-
-
0.55
V
Reverse Current
I
R
V
R
=25V
-
-
10
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
7.7
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
50
V
Reverse Voltage
V
R
50
V
Average Forward Current
I
O
0.1
A
Non-repetitive Peak Surge Current
I
FSM
2
A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55
125
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