參數(shù)資料
型號(hào): KBU8B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 8.0 Ampere Silicon Bridge Rectifiers(8.0A的橋型硅整流器(重復(fù)峰值反向電壓:100V))
中文描述: 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: CASE KBU, 4 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 30K
代理商: KBU8B
K
KBU8A-KBU8M, Rev. A
KBU8A - KBU8M
8.0 Ampere Silicon Bridge Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Features
High surge current capability.
Reliable construction technique.
Ideal for printed circuit board.
Parameter
Device
Units
8A
50
35
50
8B
100
70
100
8D
200
140
200
8G
400
280
400
8J
600
420
600
8K
800
560
800
8M
1000
700
1000
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Leakage,
total bridge @ rated V
R
(Rated V
R
)
T
A
= 25
°
C
T
A
= 100
°
C
10
500
μ
A
μ
A
Maximum Forward Voltage Drop,
per bridge
@ 8.0 A
1.0
V
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 50
°
C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
8.0
A
i
f(surge)
P
D
300
6.9
55
18
3.0
A
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-55 to +150
-55 to +150
Dimensions are in: inches (mm)
KBU
0.165(4.2)
0.150(3.8)
0.280(7.1)
0.260(6.6)
0.052(1.3)
0.048(1.2)
~
~
+
45°
0.935(23.7)
0.895(22.7)
0.0760(19.3)
MAX
0.70(17.8)
0.66(16.8)
0.455(11.3)
0.405(10.3)
0.085(2.2)
0.065(1.7)
0.260(6.8)
0.180(4.5)
0.220(5.6)
0.180(4.6)
0.16(4.1)
0.14(3.6)
+
1.0(2.54)
MIN
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.
Discrete POWE R & Signal
Technologies
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