參數(shù)資料
型號: KBU6J
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 參考電壓二極管
英文描述: 6.0 Ampere Silicon Bridge Rectifiers(6.0A的橋型硅整流器(重復(fù)峰值反向電壓:600V))
中文描述: 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: KBU, 4 PIN
文件頁數(shù): 1/3頁
文件大小: 30K
代理商: KBU6J
K
KBU6A-KBU6M, Rev. A
KBU6A - KBU6M
6.0 Ampere Silicon Bridge Rectifiers
1999 Fairchild Semiconductor Corporation
Features
High surge current capability.
Reliable construction technique.
Ideal for printed circuit board.
Dimensions are in: inches (mm)
KBU
0.165(4.2)
0.150(3.8)
0.280(7.1)
0.260(6.6)
0.052(1.3)
0.048(1.2)
~
~
+
45°
0.935(23.7)
0.895(22.7)
0.0760(19.3)
MAX
0.70(17.8)
0.66(16.8)
0.455(11.3)
0.405(10.3)
0.085(2.2)
0.065(1.7)
0.260(6.8)
0.180(4.5)
0.220(5.6)
0.180(4.6)
0.16(4.1)
0.14(3.6)
+
1.0(2.54)
MIN
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Parameter
Device
Units
6A
50
35
50
6B
100
70
100
6D
200
140
200
6G
400
280
400
6J
600
420
600
6K
800
560
800
6M
1000
700
1000
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25
°
C
(Rated V
R
)
T
A
= 100
°
C
5.0
500
μ
A
μ
A
Maximum Forward Voltage Drop,
per bridge
@ 6.0 A
1.0
V
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 65
°
C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Case,** per leg
Storage Temperature Range
Operating Junction Temperature
6.0
A
i
f(surge)
P
D
250
6.7
54
8.6
4.0
A
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JC
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads.
-55 to +150
-55 to +150
Discrete POWE R & Signal
Technologies
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