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參數(shù)資料
| 型號(hào)： | KAI-1020-ABB-JB-AE |
| 廠商： | KODAK IMAGE SENSOR SOLUTIONS |
| 元件分類： | CCD Image Sensor |
| 英文描述： | IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT |
| 封裝： | PGA-68 |
| 文件頁數(shù)： | 9/72頁 |
| 文件大?。?/td> | 3212K |
| 代理商： | KAI-1020-ABB-JB-AE |
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DEFECT DEFINITIONS
SPECIFICATIONS
Name
Definition
Maximum
Temperature(s)
tested at (°C)
Notes
Test
Sampling
Plan
Dark field major bright
defective pixel
Defect >= 28mV
1
6
Die
Bright field major dark or
bright defective pixel
Defect >= 11%
10
27, 40
7
Die
Bright field minor dark
defective pixel
Defect >= 5%
20 in Zone 2
27, 40
8
Die
Dark field minor bright
defective pixel
Defect >= 14mV
100
27, 40
2
6
Die
Bright field dead dark
pixel
Defect >= 40%
0
27, 40
5
7
Die
Bright field nearly dead
dark pixel
Defect >= 20%
0 in Zone 1
1 in Zone 2
27, 40
5, 8
7
Die
Dark field saturated bright
pixel
Defect >= 106mV
0
27, 40
3
6
Die
Dark field minor cluster
defect
A group of 2 to 10 contiguous dark
field minor defective pixels
0
27, 40
4
Die
Bright field minor cluster
defect
A group of 2 to 10 contiguous
bright field minor defective pixels
2 in Zone 2
27, 40
4, 8
Die
Major cluster defect
A group of 2 to 10 contiguous
major defective pixels
0
27, 40
4
Die
Column defect
A group of more than 10
contiguous major defective pixels
along a single column
0
27, 40
Die
Column Average
Magnitude
Within +/-0.4% of regional average
(5 columns)
0
27, 40
6, 7
9
Die
Notes:
1.
The defect threshold was determined by using a threshold of 8mV at an integration time of 33 milliseconds and scaling it by the actual integration
time used of 117 msec.
8mV*(117 msec/ 33 msec) = 28 mV
2.
The defect threshold was determined by using a threshold of 4mV at an integration time of 33 milliseconds and scaling it by the actual integration
time used of 117 msec.
4mV*(117 msec/ 33 msec) = 14 mV
3.
The defect threshold was determined by using a threshold of 30mV at an integration time of 33 milliseconds and scaling it by the actual integration
time used of 117 msec.
30mV*(117 msec/ 33 msec) = 106 mV
4.
The maximum width of any cluster defect is 2 pixels.
5.
Only dark defects.
6.
Local average is centered on column.
7.
See Test Regions of Interest for region used.
8.
See Figure 4 for zone 1 and 2 definitions.
Defect Map
The defect map supplied with each sensor is based upon testing at an ambient (27°C) temperature. Minor point defects are
not included in the defect map. All defective pixels are referenced to pixel 1,1 in the defect map (see Figure 2: Regions of
Interest).
Eastman Kodak Company, 2007
www.kodak.com/go/imagers
Revision 5.0 MTD/PS-0205 p17
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PDF描述 |
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| KAI-2001-AAA-CF-BA | IMAGE SENSOR-CCD, 1600(H) X 1200(V) PIXEL, RECTANGULAR, THROUGH HOLE MOUNT |
| KAS1104E | SLIDE DIP SWITCH-4SWITCHES, SPST, LATCHED,THROUGH HOLE-STRAIGHT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KAJ01LAGT | 功能描述:DIP 開關(guān)/ SIP 開關(guān) DIP RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| KAJ01LAST | 功能描述:SW DIP LOW PRO 1 POS RoHS:是 類別:開關(guān) >> DIP 系列:KAJ 特色產(chǎn)品:RDM Series Rotary DIP Switch 標(biāo)準(zhǔn)包裝:70 系列:RDM 電路:十六進(jìn)制 位置數(shù):16 觸點(diǎn)額定電壓:0.1A @ 42VDC 觸動(dòng)器類型:用于工具旋轉(zhuǎn) 觸動(dòng)器電平:凹槽式 安裝類型:通孔 方向:頂部觸動(dòng) 可清洗:是 其它名稱:EG4977-5RDMAR16PIT |
| KAJ01LGGT | 功能描述:DIP 開關(guān)/ SIP 開關(guān) DIP RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| KAJ01SGGT | 功能描述:DIP 開關(guān)/ SIP 開關(guān) DIP Switch Low Prof, Gull Wing RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| KAJ02LAGT | 功能描述:DIP 開關(guān)/ SIP 開關(guān) DIP RoHS:否 制造商:Omron Electronics 位置數(shù)量:10 開關(guān)類型:DIP 執(zhí)行器:Rotary 端子節(jié)距:2.54 mm 觸點(diǎn)形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
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