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參數(shù)資料
| 型號： | KA8507BD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | COMPANDER |
| 中文描述： | 擴(kuò)展器 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | KA8507BD |
KA8507B
COMPANDER
4
ELECTRICAL CHARACTERISTICS
(V
CC
= 3V, f = 1kHz, Ta = 25
°
C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
DC ELECTRICAL CHARACTERISTICS
Operating Voltage
V
CC
I
CC
2.4
7.0
V
Operating Current
No Signal
4.0
6.5
mA
COMPRESSOR PART
Standard Input Voltage ( 0dB )
V
I (COMP)
G
V1 (COMP)
G
V2 (COMP)
G
VB (COMP)
THD
COMP
V
NO (COMP)
ATT
MUTE
V
LIM (COMP)
V
CC
= 300mVrms = 0dB
Vin =
20dB
8.0
12.5
17.0
mVrms
Gain Defference
0.5
0
+0.5
dB
Vin =
40dB
1.0
0
+1.0
Bypath Gain Difference
Vin = 0dB, BYPATH = GND
1.5
0
+1.5
dB
Output Distortion
Vin = 0dB
0.5
1.0
%
Noise Output Voltage
Rg = 620ohm
3.0
5.5
mVrms
Mute Attenuation Ratio
Vin = 0dB, CMUTE = GND
60
80
dB
Limiting Voltage
1.15
1.35
1.50
Vp-p
EXPANDER PART
Standard Output Level ( 0dB )
V
O (EXP)
G
V1 (EXP)
G
V2 (EXP)
G
V3 (EXP)
G
VB (EXP)
THD
EXP
V
NO (EXP)
ATT
MUTE
V
OEXP (MAX)
Vin = 30mVrms = 0dB
110
130
160
mVrms
Gain Difference
Vin =
10dB
0.5
0
+0.5
dB
Vin =
20dB
1.0
0
+1.0
Vin =
30dB
1.5
0
+2.0
Bypath Gain Difference
Vin = 0dB, BYPATH = GND
2.5
0
+0.5
dB
Output Distortion
Vin = 0dB
0.5
1.5
%
Noise Output Voltage
Rg = 620ohm
10.0
30.0
μ
Vrms
Mute Attenuation Ratio
Vin = 0dB, EMUTE = GND
60
80
dB
Max. Output Voltage
THD = 10%
700
800
mVrms
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