參數(shù)資料
型號: KA7526D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 穩(wěn)壓器
英文描述: Tantalum Conformal-Coated Capacitor; Capacitance: 10uF; Voltage: 25V; Packaging: Tape & Reel
中文描述: 0.5 A POWER FACTOR CONTROLLER, 20 kHz SWITCHING FREQ-MAX, PDSO8
封裝: SO-8
文件頁數(shù): 13/22頁
文件大?。?/td> 250K
代理商: KA7526D
KA7526
13
Zero Current Detector
KA7526 operates as a critical conduction current mode controller. The power MOSFET is turned on by the zero current detec-
tor and turned off when the peak inductor current reaches the threshold level established by the multiplier output. The slope of
the inductor current is indirectly detected by monitoring the voltage across a separate winding and connecting it to the zero
current detector Pin 5.
Once the inductor current reaches ground level, the voltage across the winding reverses polarity. When the Idet input falls
below 1.8V, the comparator output is triggered to the low state.
To prevent false tripping, 240mV of hysteresis is provided. The zero current detector input is internally protected by two
clamps.
The upper 7.5V clamp prevents input over voltage breakdown while the lower 0.75V clamp prevents substrate injection. An
internal current limit resistor protects the lower clamp transistor in case the Idet pin is accidently shorted to ground.
A watchdog timer function was added to the IC to eliminate the need for an external oscillator when used in stand-alone appli-
cations. The timer provides a means to automatically start or restart the preconverter if the drive output has been off for more
than 300us after the inductor current reaches zero.
Drive Output
The KA7526 contains a single totem-pole output stage specifically designed for direct drive of power MOSFET. The drive
output is capable of up to 500mA peak current with a typical rise and fall time of 130ns, 50ns each with a 1.0nF load. Addi-
tional internal circuitry has been added to keep the drive output in a sinking mode whenever the UVLO is active. This charac-
teristic eliminates the need for an external gate pull-down resistor. Internal voltage clamping ensures that output driver is
always lower than 13V when supply voltage variation exceeds more than rated Vgs threshold (typ 20V) of the external MOS-
FET. This eliminates an external zener diode and extra power dissipation associated with it that otherwise is required for reli-
able circuit operation.
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