參數(shù)資料
型號: KA5X03XX
廠商: Fairchild Semiconductor Corporation
英文描述: Fairchild Power Switch(FPS)
中文描述: 飛兆半導(dǎo)體功率開關(guān)(FPS)
文件頁數(shù): 11/20頁
文件大?。?/td> 944K
代理商: KA5X03XX
KA5X03XX-SERIES
11
Typical Performance Characteristics(SenseFET part)
(Continued)
(KA5M0365RN, KA5L0365RN)
10
V
DS
, Drain-Source Voltage [V]
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Note :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
2
4
6
8
10
10
-1
10
0
10
1
Note
1. V
DS
= 50V
2. 250
μ
s Pulse Test
-55
150
25
I
D
V
GS
, Gate-Source Voltage [V]
0
1
2
3
4
5
6
7
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
Ω
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
25
150
Note :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
100
200
300
400
500
600
700
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 130V
V
DS
= 520V
Note : I
D
= 3.0 A
V
G
,
Q
G
, Total Gate Charge [nC]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
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