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參數(shù)資料
| 型號(hào)： | KA1M0965RYDTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Fairchild Power Switch(FPS) |
| 中文描述： | 36 A SWITCHING REGULATOR, PZFM5 |
| 封裝： | TO-3P, 5 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | KA1M0965RYDTU |
KA1M0965R
3
Electrical Characteristics (SFET part)
(Ta=25
°
C unless otherwise specified)
Note:
1. Pulse test: Pulse width
≤
300
μ
S, duty cycle
≤
2%
2.
S
R
Parameter
Drain-Source Breakdown Voltage
Symbol
BV
DSS
Condition
Min. Typ. Max. Unit
650
-
-
-
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=4.5A
V
DS
=15V, I
D
=4.5A
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
50
-
-
200
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
0.96
-
1750
190
78
20
23
85
30
1.2
-
-
-
-
50
55
180
70
S
5.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are essentially
independent of
operating temperature)
nS
Qg
-
74
75
nC
Qgs
-
12
-
Gate-Drain (Miller) Charge
Qgd
-
35.4
-
1
---
=
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