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參數(shù)資料
| 型號(hào)： | K9XXG16UXM-K |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SSR H/S PS 230V 50A 4-20MA E |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 38/39頁 |
| 文件大?。?/td> | 680K |
| 代理商： | K9XXG16UXM-K |
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FLASH MEMORY
38
K9W4G08U1M
K9K2G08U0M
K9W4G16U1M
K9K2G16Q0M
K9K2G16U0M
K9K2G08Q0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
t
I
Rp(ohm)
Figure 17. Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
ibusy
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
VOH
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
100
tf
200
300
400
3.6
3.6
3.6
3.6
2.4
1.2
0.8
0.6
VOL
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.85V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
1.8V device - V
OL
: 0.1V, V
OH
: V
CC
q-0.1V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
1.7
1.7
1.7
1.7
1.7
0.85
0.57
0.43
C
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9XXG16UXM-P | Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output. |
| K9XXG16UXM-Y | Multi-function, zero cross and proportional output SSR with integrated heat sink. 2-wire Modbus input, 230VAC, 50A single phase output, bult-in current measurement. |
| K9K2G08U0M-V | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-F | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K4G08Q0M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9XXG16UXM-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXG16UXM-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9XXXXX | 制造商:TDK-Lambda Corporation 功能描述:900W,150-264VAC - Bulk |
| K9ZZ00000842 | 制造商:Panasonic Industrial Company 功能描述:CONNECTOR |
| K9ZZ00000970 | 制造商:Panasonic Industrial Company 功能描述:CONNECTOR |
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