參數(shù)資料
型號: K9K4G16Q0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
中文描述: 512M × 8位/ 256M × 16位NAND閃存
文件頁數(shù): 21/38頁
文件大?。?/td> 601K
代理商: K9K4G16Q0M
FLASH MEMORY
21
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
Read Operation
(Intercepted by CE)
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Dout N
Dout N+1
Dout N+2
Row Address
Column Address
t
WB
t
AR
t
CHZ
t
OH
t
R
t
RR
t
RC
30h
Read Operation
CE
CLE
R/B
WE
ALE
RE
Busy
00h
Col. Add1
Col. Add2
Row Add1
Dout N
Dout N+1
Column Address
Row Address
t
WB
t
AR
t
R
t
RC
t
RHZ
t
RR
Dout M
t
WC
Row Add2
30h
t
CLR
I/Ox
I/Ox
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
Row Add3
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K4G16U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9K8G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9K8G08U0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
K9K8G08U0A-PCB0T00 制造商:Samsung SDI 功能描述:
K9K8G08U0A-PIB0000 制造商:Samsung Electro-Mechanics 功能描述:1G X 8 FLASH 2.7V PROM, 20 ns, 48 Pin Plastic SMT