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參數(shù)資料
| 型號： | K9K1208U0A-YIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位NAND閃存 |
| 文件頁數(shù)： | 8/27頁 |
| 文件大小： | 357K |
| 代理商： | K9K1208U0A-YIB0 |
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K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
8
AC Characteristics for Operation
NOTE
:
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ALE to RE Delay( ID read )
t
AR1
100
-
ns
ALE to RE Delay(Read cycle)
t
AR2
50
-
ns
CE to RE Delay( ID read)
t
CR
100
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
30
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
60
-
ns
RE Access Time
t
REA
-
35
ns
RE High to Output Hi-Z
t
RHZ
15
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE High Hold Time
t
REH
25
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(1)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
RE Low to Status Output
t
RSTO
-
35
ns
CE Low to Status Output
t
CSTO
-
45
ns
WE High to RE Low
t
WHR
60
-
ns
RE access time(Read ID)
t
READID
-
35
ns
Device Resetting Time(Read/Program/Erase)
t
RST
-
5/10/500
(3)
μ
s
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE setup Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE setup Time
t
CS
0
-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
15
-
ns
Write Cycle Time
t
WC
60
-
ns
WE High Hold Time
t
WH
25
-
ns
NOTE
: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
相關PDF資料 |
PDF描述 |
|---|---|
| K9K1208U0M | 64M x 8 Bit NAND Flash Memory |
| K9K1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory |
| K9K1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory |
| K9K1G08U0M-YCB0 | 128M x 8 Bit NAND Flash Memory |
| K9K1G08U0M-YIB0 | 128M x 8 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1208U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1208U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9K1208U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9K1208U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory |
| K9K1216D0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
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