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參數(shù)資料
| 型號： | K9F6408U0C-H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit Bit NAND Flash Memory |
| 中文描述： | 8米× 8位位NAND閃存 |
| 文件頁數(shù)： | 6/26頁 |
| 文件大?。?/td> | 347K |
| 代理商： | K9F6408U0C-H |
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K9F6408U0A-TCB0, K9F6408U0A-TIB0
FLASH MEMORY
6
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0A-TCB0:T
A
=0 to 70
°
C, K9F6408U0A-TIB0:T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
V
Temperature Under Bias
KM29U64000AT
T
BIAS
-10 to + 125
°
C
KM29U64000AIT
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns,CE=V
IL
, I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=SE=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=SE=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
±
10
Input High Voltage,All inputs
V
IH
-
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F6408U0M-TCB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TIB0 | 8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-B | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-Q | 8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0B-TCB0 | 8M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F6408U0C-Q | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0C-T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory |
| K9F6408U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
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