參數(shù)資料
型號(hào)： K9F6408U0C-B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit Bit NAND Flash Memory
中文描述： 8米× 8位位NAND閃存
文件頁(yè)數(shù)： 6/26頁(yè)
文件大?。?/td> 347K
代理商： K9F6408U0C-B
K9F6408U0A-TCB0, K9F6408U0A-TIB0
FLASH MEMORY
6
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0A-TCB0:T
A
=0 to 70
°
C, K9F6408U0A-TIB0:T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
V
Temperature Under Bias
KM29U64000AT
T
BIAS
-10 to + 125
°
C
KM29U64000AIT
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns,CE=V
IL
, I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=SE=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=SE=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
±
10
Input High Voltage,All inputs
V
IH
-
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
相關(guān)PDF資料
PDF描述
K9F6408U0C-Q 8M x 8 Bit Bit NAND Flash Memory
K9F6408U0B-TCB0 8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB0 8M x 8 Bit NAND Flash Memory
K9F6408U0B 8M x 8 Bit NAND Flash Memory
K9F8008W0M- Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408U0C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-Q 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0C-T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
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