參數(shù)資料
型號(hào): K9F6408Q0C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:46; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述: 8米× 8位位NAND閃存
文件頁(yè)數(shù): 9/29頁(yè)
文件大?。?/td> 499K
代理商: K9F6408Q0C
FLASH MEMORY
9
K9F6408U0C
K9F6408Q0C
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and
Vcc
Q
pins. During transitions, this level may undershoot to -2.0V for periods
<20ns. Maximum DC voltage on input/output pins is V
CCQ
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
Vcc
Q
-0.2 to + 2.45
-0.6 to + 4.6
V
Temperature
Under Bias
K9F6408X0C-XCB0
T
BIAS
-10 to + 125
°
C
K9F6408X0C-XIB0
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408X0C-XCB0:TA=0 to 70
°
C, K9F6408X0C-XIB0:TA=-40 to 85
°
C)
Parameter
Symbol
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
Vcc
Q
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE :
V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F6408Q0C(1.8V)
K9F6408U0C(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
CE=V
IL,
I
OUT
=0mA
tRC=50ns
-
5
10
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH*
I/O pins
Vcc
Q
-0.4
Vcc
Q
+0.3
2.0
-
Vcc
Q
+0.3
V
Except I/O pins
V
CC
-0.4
-
VCC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F6408Q0C :I
OH
=-100
μ
A
K9F6408U0C :I
OH
=-400
μ
A
Vcc
Q
-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F6408Q0C :I
OL
=100uA
K9F6408U0C :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F6408Q0C :V
OL
=0.1V
K9F6408U0C :V
OL
=0.4V
3
4
-
8
10
-
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408Q0C-B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408Q0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
K9F6408U0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory