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參數(shù)資料
| 型號(hào)： | K9F5608U0B-PCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁(yè)數(shù)： | 34/34頁(yè) |
| 文件大?。?/td> | 604K |
| 代理商： | K9F5608U0B-PCB0 |
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FLASH MEMORY
34
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. WP pin provides hardware protection and is recommended to be kept at
V
IL
during power-up and power-down and recovery time of minimum 10
μ
s is required before internal circuit gets ready for any com-
mand sequences as shown in Figure 16. The two step command sequence for program/erase provides additional software protec-
tion.
Figure 16. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
WE
Data Protection & Powerup sequence
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10
μ
s
≈
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0B-PIB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-VCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608Q0B-DCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F5608Q0B-DIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5608U0B-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-VIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-YIB0 | 制造商:Samsung Electro-Mechanics 功能描述:32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48 |
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