參數(shù)資料
型號(hào)： K9F1208UOM
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲(chǔ)器)
中文描述： 6400 × 8位NAND閃存（64米× 8位與非閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 3/41頁(yè)
文件大?。?/td> 1006K
代理商： K9F1208UOM
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
3
Revision No
0.5
0.6
0.7
Remark
Preliminary
History
1. Addition of new operation : Multi-Plane Copy-Back Program.
- Multi-Plane Copy-Back Program is extended operation of one-page
Copy-Back program.
=> After successive reading of multiple 528 byte data set at the source
planes, the above data are moved to internal page registers and same
procedure as Multi-Plane Page Programming is executed.
1.Powerup sequence is added
: Recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
1. Copy-Back Program(Dummy) is added in Command sets table.
(before revision)
(after revision)
Note 2. Page Program(True) and Copy-Back Program(True) are available on 1 plane
operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on
the 2nd,3rd,4th plane of multi plane operation.
Function
1st.
Cycle
2nd.
Cycle
3rd.
Cycle
Page Program (True)
80h
10h
-
Page Program (Dummy)
80h
11h
-
Copy-Back Program(True)
00h
8Ah
10h
Function
1st.
Cycle
2nd.
Cycle
3rd.
Cycle
Page Program (True)
(2)
80h
10h
-
Page Program (Dummy)
(2)
80h
11h
-
Copy-Back Program(True)
(2)
00h
8Ah
10h
Copy-Back Program(Dummy)
(2)
03h
8Ah
11h/10h
1
μ
s
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
≈
WE
Draft Date
May. 30th 2001
Jul. 23th 2001
Aug. 23th 2001
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208UOMYCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208UOM-YCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208X0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208X0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1216D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
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