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參數(shù)資料
| 型號： | K8D6316UTM-DI08 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |
| 中文描述： | 6400位（800萬x8/4M x16）的雙銀行NOR閃存 |
| 文件頁數(shù)： | 33/48頁 |
| 文件大小： | 658K |
| 代理商： | K8D6316UTM-DI08 |
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FLASH MEMORY
K8D6x16UTM / K8D6x16UBM
Revision 1.5
March 2005
33
Alternate WE Controlled Write
Notes :
1. Not 100% tested.
2. The duration of the Program or Erase operation varies and is calculated in the internal algorithms.
Parameter
Symbol
V
CC
=2.7V~3.6V
Unit
-7
-8
-9
Min
Max
Min
Max
Min
Max
Write Cycle Time (1)
t
WC
70
-
80
-
90
-
ns
Address Setup Time
t
AS
0
-
0
-
0
-
ns
t
ASO
55
-
55
-
55
-
ns
Address Hold Time
t
AH
45
-
45
-
45
-
ns
t
AHT
0
-
0
-
0
-
ns
Data Setup Time
t
DS
35
-
35
-
45
-
ns
Data Hold Time
t
DH
0
-
0
-
0
-
ns
Output Enable Setup Time (1)
t
OES
0
-
0
-
0
-
ns
Output
Enable
Hold Time
Read (1)
t
OEH1
0
-
0
-
0
-
ns
Toggle and Data Polling (1)
t
OEH2
10
-
10
-
10
-
ns
CE Setup Time
t
CS
0
-
0
-
0
-
ns
CE Hold Time
t
CH
0
-
0
-
0
-
ns
Write Pulse Width
t
WP
35
-
35
-
45
-
ns
Write Pulse Width High
t
WPH
25
-
25
-
30
-
ns
Programming Operation
Word
t
PGM
14(typ.)
14(typ.)
14(typ.)
μ
s
Byte
9(typ.)
9(typ.)
9(typ.)
μ
s
Accelerated Programming
Operation
Word
t
ACCPGM
9(typ.)
9(typ.)
9(typ.)
μ
s
Byte
7(typ.)
7(typ.)
7(typ.)
μ
s
Block Erase Operation (2)
t
BERS
0.7(typ.)
0.7(typ.)
0.7(typ.)
sec
V
CC
Set Up Time
t
VCS
50
-
50
-
50
-
μ
s
Write Recovery Time from RY/BY
t
RB
0
-
0
-
0
-
ns
RESET High Time Before Read
t
RH
50
-
50
-
50
-
ns
RESET to Power Down Time
t
RPD
20
-
20
-
20
-
μ
s
Program/Erase Valid to RY/BY Delay
t
BUSY
90
-
90
-
90
-
ns
V
ID
Rising and Falling Time
t
VID
500
-
500
-
500
-
ns
RESET Pulse Width
t
RP
500
-
500
-
500
-
ns
RESET Low to RY/BY High
t
RRB
-
20
-
20
-
20
μ
s
RESET Setup Time for Temporary Unprotect
t
RSP
1
-
1
-
1
-
μ
s
RESET Low Setup Time
t
RSTS
500
-
500
-
500
-
ns
RESET High to Address Valid
t
RSTW
200
-
200
-
200
-
ns
Read Recovery Time Before Write
t
GHWL
0
-
0
-
0
-
ns
CE High during toggling bit polling
t
CEPH
20
-
20
-
20
-
ns
OE High during toggling bit polling
t
OEPH
20
-
20
-
20
-
ns
AC CHARACTERISTICS
Write(Erase/Program)Operations
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