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參數(shù)資料
| 型號(hào)： | K827PH |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | OPTOCPL PHOTOTRANS 4CH 600% 8DIP |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Dual CTR 50-600% |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 136K |
| 代理商： | K827PH |
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 23-May-13
1
Document Number: 83522
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Optocoupler, Phototransistor Output
DESCRIPTION
In the K817P part each channel consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin (single) plastic dual inline package.
AGENCY APPROVALS
BSI: EN 60065:2002, EN 60950-1:2006
DIN EN 60747-5-2 (VDE 0884)
FIMKO
UL file no. E52744
cUL tested to CSA 22.2 bulletin 5A
FEATURES
Endstackable to 2.54 mm (0.1") spacing
DC isolation test voltage 5000 V
RMS
Current transfer ratio (CTR) selected into
groups
Low temperature coefficient of CTR
Wide ambient temperature range
Available in single, dual and quad channel packages
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
APPLICATIONS
Programmable logic controllers
Modems
Answering machines
General applications
17203-5
C
E
1
A
C
C
17918_13
ORDERING INFORMATION
K
8
1
7
P
#
x
PART NUMBER
PACKAGE
OPTION
AGENCY CERTIFIED/
PACKAGE
VDE, BSI, FIMKO,
UL, cUL
DIP-4
CTR (%)
5 mA
10 mA
5 mA
50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
K817P
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K817P8
K817P9
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
t
p
/T = 0.5, t
p
10 ms
Power dissipation
Junction temperature
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
T
j
6
V
60
1.5
70
125
mA
A
mW
°C
t
p
10 μs
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
7
50
100
70
125
V
V
mA
mA
mW
°C
7.62 mm
DIP
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