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參數(shù)資料
| 型號： | K7Q163654A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| 中文描述： | 512Kx36位，1Mx18位的國防評估報告的SRAM |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 510K |
| 代理商： | K7Q163654A |
512Kx36 & 1Mx18 QDR
TM
b4 SRAM
- 2 -
Rev 1.0
July. 2002
K7Q163654A
K7Q161854A
72
512Kx36-bit, 1Mx18-bit QDR
TM
SRAM
FEATURES
2.5V+0.1V/-0.1V Power Supply.
I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
1.8V+0.1V/-0.1V for 1.8V I/O
.
Separate independent read and write data ports
with concurrent read and write operation
.
HSTL I/O.
Full data coherency, providing most current data .
Synchronous pipeline read with self timed late write.
Registered address, control and data input/output.
DDR(Double Data Rate) Interface on read and write ports.
Fixed 4-bit burst for both read and write operation.
Clock-stop supports to reduce current.
Two input clocks(K and K) for accurate DDR timing at clock
rising edges only.
Two input clocks for output data(C and C) to minimize
clock-skew and flight-time mismatches.
Single address bus.
Byte writable function.
Sepatate read/write control pin(R and W)
Simple depth expansion with no data contention.
Programmable output impedance.
JTAG 1149.1 compatible test access port.
165FBGA(11x15 ball aray FBGA) with body size of 13x15mm
FUNCTIONAL BLOCK DIAGRAM
R
W
BW
X
ADDRESS
C
C
D(Data in)
ADD
REG
DATA
REG
CLK
GEN
CTRL
LOGIC
512Kx36
1Mx18
MEMORY
ARRAY
WRITE DRIVER
K
K
36 (or 18)
SELECT OUTPUT CONTROL
S
W
O
O
O
Notes
: 1. Numbers in ( ) are for x18 device.
72
17(or 18)
17 (or 18)
36 (or 18)
Q(Data Out)
QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Hitachi, IDT, Micron, NEC and Samsung technology.
4 (or 2)
72(or 36)
72(or 36)
144
Organization
Part
Number
Cycle
Time
Access
Time
Unit
X36
K7Q163654A-FC20
5.0
2.2
ns
K7Q163654A-FC16
6.0
2.5
ns
K7Q163654A-FC13
7.5
3.0
ns
K7Q163654A-FC10
10.0
3.0
ns
X18
K7Q161854A-FC20
5.0
2.2
ns
K7Q161854A-FC16
6.0
2.5
ns
K7Q161854A-FC13
7.5
3.0
ns
K7Q161854A-FC10
10.0
3.0
ns
(or 36)
(or 36)
(or 72)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7Q163654A-FC10 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC13 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC16 | Electrical Outlet Connector; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes |
| K7Q163654A-FC20 | 512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q161862 | 512Kx36 & 1Mx18 QDRTM b2 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7Q163654A-FC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC16 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163654A-FC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit QDR SRAM |
| K7Q163662B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 QDRTM b2 SRAM |
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