參數(shù)資料
型號(hào)： K7D801871B-HC25
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx36 & 512Kx18 SRAM
中文描述： 256Kx36
文件頁(yè)數(shù)： 7/16頁(yè)
文件大?。?/td> 270K
代理商： K7D801871B-HC25
Rev 4.0
256Kx36 & 512Kx18 SRAM
- 7 -
January. 2002
K7D801871B
K7D803671B
RECOMMENDED DC OPERATING CONDITIONS
NOTE
: 1. These are DC test criteria. DC design criteria is V
REF
±
50mV. The AC V
IH
/V
IL
levels are defined separately for measuring
timing parameters.
2. V
IH
(Max)DC=
V
DDQ
+0.3, V
IH
(Max)AC=
2.6
V (2.1V for DQs) (pulse width
≤
20% of cycle time).
3. V
IL
(Min)DC=
-
0.3V, V
IL
(Min)AC=-1.0V (-0.5V for DQs) (pulse width
≤
20% of cycle time).
4. V
IN-CLK
specifies the maximum allowable DC level for the differential clock. i.e V
IL-CLK
and V
IH-CLK
.
5. V
DIF-CLK
specifies the minimum Clock differential voltage required for switching. i.e DC voltage difference between V
IL-CLK
and V
IH-CLK
.
6. V
CM-CLK
specifies the Clock crossing point for the differential clock or the allowable common clock level for a single ended clock.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Core Power Supply Voltage
V
DD
2.37
2.5
2.63
V
Output Power Supply Voltage
V
DDQ
1.4
1.5
2.0
V
Input High Level Voltage
V
IH
V
REF
+0.1
-
V
DDQ
+0.3
V
1, 2
Input Low Level Voltage
V
IL
-0.3
-
V
REF
-0.1
V
1, 3
Input Reference Voltage
V
REF
0.68
0.75
1.0
V
Clock Input Signal Voltage
V
IN-CLK
-0.3
-
V
DDQ
+0.3
V
1, 4
Clock Input Differential Voltage
V
DIF-CLK
0.1
-
V
DDQ
+0.6
V
1, 5
Clock Input Common Mode Voltage
V
CM-CLK
0.68
0.75
0.9
V
1, 6
ABSOLUTE MAXIMUM RATINGS
NOTE
: Power Dissipation Capability will be dependent upon package characteristics and use environment. See enclosed thermal impedance data.
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Value
Unit
Core Supply Voltage Relative to V
SS
V
DD
-0.5 to 3.13
V
Output Supply Voltage Relative to V
SS
V
DDQ
-0.5 to 2.4
V
Voltage on any pin Relative to V
SS
V
IN
-0.5 to V
DDQ
+0.5 (2.4V
MAX
)
V
Output Short-Circuit Current(per I/O)
I
OUT
25
mA
Storage Temperature
T
STR
-55 to 125
°
C
相關(guān)PDF資料
PDF描述
K7D801871B-HC30 256Kx36 & 512Kx18 SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7D801871B-HC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7D801871B-HC33 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7D801871B-HC35 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7D801871B-HC37 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
K7D803671B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 SRAM
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