參數(shù)資料
型號(hào)： K7B403225B-QC
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx36/x32 & 256Kx18 Synchronous SRAM
中文描述： 128Kx36/x32
文件頁(yè)數(shù)： 8/18頁(yè)
文件大小： 470K
代理商： K7B403225B-QC
K7A401800B
128Kx36/x32 & 256Kx18 Synchronous SRAM
- 8 -
Rev 1.0
Nov 2001
K7A403200B
K7A403600B
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
Voltage on V
DDQ
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.3
V
Power Dissipation
P
D
2.2
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
Industrial
T
OPR
-40 to 85
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note :
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
4
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
6
pF
OPERATING CONDITIONS at 3.3V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
3.135
3.3
3.6
V
Ground
V
SS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O
(0
°
C
≤
T
A
≤
70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
2.375
2.5
2.9
V
Ground
V
SS
0
0
0
V
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