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參數(shù)資料
| 型號(hào)： | K7A403601A-QC140 |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 4 ns, PQFP100 |
| 封裝： | 20 X 14 MM, TQFP-100 |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 401K |
| 代理商： | K7A403601A-QC140 |
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K7A403601A
128Kx36 Synchronous SRAM
- 6 -
Rev 1.0
May 2000
PASS-THROUGH TRUTH TABLE
Note : 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
PREVIOUS CYCLE
PRESENT CYCLE
NEXT CYCLE
OPERATION
WRITE
OPERATION
CS1
WRITE
OE
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
Initiate Read Cycle
Address=An
Data=Qn-1 for all bytes
L
H
L
Read Cycle
Data=Qn
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=Qn-1 for all bytes
H
L
No carryover from
previous cycle
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=High-Z
H
No carryover from
previous cycle
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
Initiate Read Cycle
Address=An
Data=Qn-1 for one byte
L
H
L
Read Cycle
Data=Qn
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
No new cycle
Data=Qn-1 for one byte
H
L
No carryover from
previous cycle
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
CAPACITANCE*(TA=25
°C, f=1MHz)
*NOTE : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
5
pF
Output Capacitance
COUT
VOUT=0V
-
7
pF
OPERATING CONDITIONS at 3.3V I/O (0
°C≤ TA≤70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.6
V
VDDQ
3.135
3.3
3.6
V
Ground
VSS
0
V
OPERATING CONDITIONS at 2.5V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.6
V
VDDQ
2.375
2.5
2.9
V
Ground
VSS
0
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7A403601B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A403601B-QC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A403609A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM |
| K7A403609B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36/x32 & 256Kx18 Synchronous SRAM |
| K7A403609B_06 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36/x32 & 256Kx18 Synchronous SRAM |
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